LED chip manufacturing process
In order to obtain high-power LED devices, it is necessary to prepare a suitable high-power LED panel light chip. The international community usually summarizes the manufacturing methods of high-power LED chips as follows:
â‘ Increase the size of the light. A single LED light emitting area and effectively increase the amount of current flowing through the uniform distribution layer TCL to achieve the desired magnetic flux. However, simply increasing the light-emitting area does not solve this problem, and the heat dissipation problem cannot achieve the expected effect and the magnetic flux in practical applications.
②Inverted method of silicon bottom plate. Eutectic solder First, prepare a large LED panel lamp chip and prepare a suitable size. On the silicon substrate and the silicon substrate, use a gold eutectic solder layer and a conductive layer conductor (ultrasonic gold wire ball and socket joint) , And an LED chip and a large-sized silicon substrate that are soldered together using eutectic solder of the mobile device. This structure is more reasonable, not only to consider this problem, considering the problems of light and heat, this is the mainstream high-power LED production. Lumileds company, the United States developed a different flip chip power supply AlGaInN (FCLED) structure in 2001, the manufacturing process: the first P-type gallium nitride epitaxial film deposited on the top layer thickness of more than 500A, and returns the reflection of Niau Ohmic contact, then selectively etched, using a mask, deposited on the P-type layer and the multi-quantum well active layer to expose the N-type layer, the 1mm × 1mm side of the N-type ohmic contact layer 1 formed after etching The P-type ohmic contact, the N-type ohmic contact is inserted into it in a comb shape, the chip size, so that the current expansion distance can be shortened to minimize the ESD protection diode (ESD) silicon chip supporting and indium gallium aluminum nitride diffusion resistance Install upside down solder bumps.
â‘¢Ceramic plate flip method. The general structure of the crystal structure of the LED panel lamp chip is the next large LED chip, the eutectic solder layer and the conductive layer on the ceramic plate and ceramic substrate, the corresponding leads generated in this area, the use of crystal LEDs in the welding electrode Welding equipment for welding chips and large-sized ceramic thin plates. Such a structure is a problem that needs to be considered, and it also needs to be considered. Light, heat, the use of high thermal conductivity ceramic plates, ceramic plates, the heat dissipation effect is very good, the price is relatively low, and it is more suitable for the current basic packaging materials and space reserved for Integration of integrated circuits in the future.
â‘£Sapphire substrate transition method. The manufacturer of the PN junction after the removal of the sapphire substrate grows the InGaN chip on the sapphire substrate, and then connects the traditional quaternary material to manufacture the lower electrode of the blue LED chip with a large structure by a conventional method.
⑤AlGaInN silicon carbide (SiC) back light method. American Cree is the world's only AlGaInN ultra-high brightness LED manufacturer of silicon carbide substrates. The architecture of AlGaInN / SICA chips produced over the years has been continuously improved and increased brightness. Because the P-type and N-type electrodes are located on the top and bottom of the chip, respectively, using a single wire bond, better compatibility and ease of use, it has become another mainstream product development AlGaInNLED.
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