The technical team of Wuhan Huacan Photoelectric Co., Ltd. developed a high-brightness GaN green with independent intellectual property by optimizing the structural design, optimizing molecular beam epitaxy and metal organic chemical vapor deposition by using new substrate technology such as super-crystal sustained-release stress. The LED epitaxial wafer realizes mass production of GaN epitaxial wafers. The blue-green LED chip generally manufactured on sapphire has poor antistatic property due to its unidirectional conduction. The company has invested a lot of research and development in improving the ESD level of devices, improving the crystal quality of p-type GaN and optimizing the device electrode design. At present, the ESD level of the chips produced is over 4,000V, which is the quality of similar foreign products. The traditional process of epitaxial GaN production of LED blue-green light on sapphire is essentially limited by the heteroepitaxial process, the electro-optical conversion efficiency is difficult to improve, and the efficiency is very low. The company's R&D staff has extended the GaN LED structure on the HVPE grown GaN substrate. The process has produced an LED chip with an optical power of 17.8mW (at 20mA), while the same type of blue LED chip on the market is only about 10mW. Although it is difficult to achieve mass production in the short term due to the limitation of GaN substrates, the ultimate solution for homogenous GaN epitaxy will certainly be realized in the near future. The following is the blue light-related information of the epitaxial GaN LED structure on the GaN substrate grown by HVPE in Wuhan Huacan. u Chip structure Project specification Epitaxial structure Substrate material Sapphire Epitaxial structure InGaN/GaN MQW Electrode material P electrode Aluminum electrode (Al pad) N electrode Aluminum electrode (Al pad) Chip size Chip size 300mm × 300mm Chip thickness 90±5mm u Photoelectric characteristic parameters (normal temperature) Photoelectric parameter symbol test condition value unit Min. Typ. Max. Forward voltage Vf @20mA DC 3.0 - 3.2 V 3.2 - 3.4 3.4 - 3.6 Main wavelength Wd @20mA DC 460 - 462.5 nm 462.5 - 465 465 - 467.5 467.5 - 470 Leakage current Ir @5V DC - - 10 mA Brightness Iv @20mA DC 50 - 60 mcd 60 - 70 70 - 80 80 - 90 90 - 100 100 - 110 110 - 120 u Chip appearance (unit: Mm) ![]()
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