If you've been paying attention to the latest news about semiconductor process technology, you may already know that the world's most cutting-edge foundries will produce devices using FinFET's new transistor structure as the basic chip building block. These chips to be produced will use a process node collectively referred to as 16/14 nm. But you may have to ask, what exactly is FinFET? What is the difference with standard transistors? What advantages and challenges will it bring?
A key ingredient in semiconductor manufacturing technology, a key factor in the current $292 billion market capitalization of the semiconductor industry, was the planar process that Jean Hoerni invented at Fairchild in the 1950s. The planar process enables smaller transistors to be mounted in a variety of different circuits, or they can be efficiently connected together and embedded in parallel panels without having to be stacked like separate components on a printed circuit board. The planar process enables extreme miniaturization of the IC. With the implementation of planar processes, semiconductors can be layered or etched onto ultrapure wafers. The planar transistor shown in Figure 1a (actually a complex switch) consists of three main features: source, gate and drain, which are etched and layered on the substrate of the chip. Figure 1b shows the FinFET. Note that the gate here surrounds the channel on three sides, while the gate on the planar transistor covers only the top of the channel.
Source refers to where electrons enter the transistor. Depending on the gate voltage, the transistor gate can be on or off under the gate, similar to the turn-on and turn-off of the light switch. If the gate allows the signal to pass through the channel, the drain will move electrons to the next transistor in the circuit. An ideal transistor can allow a large amount of current to pass when it is turned on, and almost no current is allowed to pass when it is turned off, and it can switch billions of times per second between on/off states. Switching speed is the basic parameter that determines the performance of each IC. The chip design company organizes the transistors in various circuits and arranges them in functional blocks (such as processors, memory, and logic blocks) in turn. In this way, these modules can also be organized to form a variety of ICs, enabling a variety of magical electronic device functions, which benefit us a lot.
Since the 1960s, the semiconductor industry has introduced a series of chip innovations, and the pace of innovation is synchronized with Moore's Law, which means that the number of transistors in an IC doubles every two years. The doubling of the number of transistors means that today's cutting-edge ICs contain billions of transistors of the same size as the 1960s, but the operating speed increases exponentially, power consumption decreases exponentially, and the voltage is 1.2V or even more. low. Today, transistors are very small, and some are even as wide as dozens of atoms.
Figure 1 – 2D Traditional Planar Transistor (a) and 3DFinFET Transistor (b) have different gate positions
Keep up with the pace of development of Moore's LawIn the face of the further development of semiconductors seems to be limited by the actual physical conditions, the industry has been trying to keep up with the development of Moore's Law. Over the past 10 years, process technology experts have worked hard to ensure the electronic integrity of planar transistors. In short, the source, gate and drain of a planar transistor are very small and the performance requirements are extremely high, so these transistors are not enough to control the flow of electrons therein. The electrons may leak out or may flow out of the drain even if the device is turned off.
For battery-powered devices such as mobile phones, this means that the battery consumes more power, and even if the phone is turned off, it consumes power quickly. For AC powered devices (ie appliances powered by wall plugs), this means that the device wastes power and is more prone to heat. If the heat is too high, and no cooling and cooling measures are taken, the service life of the product will be shortened, because the leakage will generate heat, and the heat will increase the leakage. Of course, cooling can also incur additional costs to the equipment. The leakage problem is most evident for semiconductors at the 130nm process node. In an era of extreme leakage, Microsoft had to recall the Xbox 360 worldwide because of overheating. Leakage is one of the reasons why microprocessor companies have to adopt less efficient multi-core processors instead of faster, much hotter single-processor architectures.
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